Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Ceramics International

Volumn 34, Issue 3, 2008, Pages 657-660

  Zheng, Haiwu ^a,b   Su, Jianfeng ^a   Fu, Zhuxi ^a   Li, Guang ^a   Li, Xiaoguang ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HENAN UNIVERSITY   (China)

Author keywords

3C SiC film; LPCVD; Si (1 1 0); Surface morphology

Indexed keywords

EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; SUBSTRATES; SURFACE MORPHOLOGY;

3C-SIC FILMS; CARRIER GAS; CRYSTALLINE FILMS; GAS SOURCES; HIGH CRYSTALLINITY;

THIN FILMS;

EID: 38949177016     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.02.011     Document Type: Article

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