Suppression of the twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 193-196

  Nishiguchi, T ^a   Nakamura, M ^a   Nishio, K ^a   Isshiki, T ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(110); 3C SiC; Chemical vapor deposition; Hetero epitaxy; Off axis; Twin

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

SUBSTRATE OFF-AXIS; TWIN FORMATION;

SILICON CARBIDE;

EID: 33845807052     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.193     Document Type: Conference Paper

References (3)

1. T. Nishiguchi,Y. Mukai, S. Ohshima, and S. Nishino, phys. stat. sol. (c) Vol. 0 (2003), p. 2585.
2. T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki, and S. Nishino, Appl. Phys. Lett. Vol. 84 (2003), p. 3082.
3. M. Nakamura, T. Nishiguchi, K. Nishio, T. Isshiki, S. Ohshima, and S. Nishino, in this volume.