Heteroepitaxial growth and characterization of 3C-SiC films on Si substrates using LPVCVD

Journal of Materials Science and Technology

Volumn 21, Issue 4, 2005, Pages 536-540

  Zheng, Haiwu ^a   Zhu, Junjie ^b   Fu, Zhuxi ^b   Lin, Bixia ^b   Li, Xiaoguang ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

3C SiC films; Growth mechanism; Low pressure vertical chemical vapor deposition (LPVCVD)

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; FILMS; GROWTH (MATERIALS); MECHANISMS;

3C-SIC FILMS; DIFFUSION CONTROL; FIELD EMISSION SCANNING ELECTRON MICROSCOPE (FESEM); GROWTH PROCESS; LOW-PRESSURE VERTICAL CHEMICAL VAPOR DEPOSITION (LPVCVD); SURFACE CONTROL;

SILICON CARBIDE;

EID: 23944507140     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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