Low- and high-temperature silicon wafer direct bonding for micromachined absolute pressure sensors

Proceedings - Electrochemical Society

Volumn PV 2005-02, Issue , 2005, Pages 205-215

  Knechtel, Roy ^a   Dahlmann, Gerald ^a   Schwarz, Uwe ^a  

^a X FAB Semiconductor Foundries AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; HIGH TEMPERATURE EFFECTS; MICROMACHINING; PRESSURE EFFECTS; SENSORS;

BOND PROCESS; PIEZORESISTORS; PRESSURE SENSORS;

SILICON WAFERS;

EID: 31844440562     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. W.H. Ko, M.H: Bao, Y.D. Hing - A high-sensitivity integrate-circuit capacitive pressure transducer, IEEE Transaction on Electron Devices, Vol 29 (1982, pp.48-56
2. M.H. Bao: Micro-Mechanical Transducers, Pressure Sensors, Accelerometers and Gyroscopes, Elsevier, Amsterdam, 2000
3. M. Madou - CRC Press New York 1997 - Fundamentals of Microfabrication
4. Q.-Y. Tong, U. Gösele - The Electrochemical Society Series, John Wiley & Sons 1999 - Semiconductor Wafer Bonding
5. MIL-STD-883E, Method 101410 14 March 1995
6. L.I. Maissel, R. Glang - MCGraw-Hill New York 1970 - Handbook of Thin Film Technology
7. A.S. Grove, - John Wiley 1967 - Physics and Technology of Semiconductor Devices