A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2006, Pages

  Orner, B A ^a   Dahlstrom M ^a   Pothiawala, A ^a   Rassel, R M ^a   Liu, Q ^a   Ding, H ^a   Khater, M ^b   Ahlgren, D ^c   Joseph, A ^a   Dunn, J ^a  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Heterojunction bipolar transistors; Millimeter wave bipolar integrated circuits; Millimeter wave devices; Silicon alloys; Silicon bipolar BiCMOS process technology

Indexed keywords

BICMOS PROCESS TECHNOLOGY; MILLIMETER WAVE BIPOLAR INTEGRATED CIRCUITS;

BICMOS TECHNOLOGY; MILLIMETER WAVE DEVICES; SCHOTTKY BARRIER DIODES; SILICON ALLOYS; VARACTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 39049143679     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2006.311157     Document Type: Conference Paper

References (5)

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3. B. A. Orner et al., Proceedings of the 2003 Bipolar/BiCMOS circuits and Technology Meeting, 203-206 (2003).
4. B. A. Orner, et al., Proceedings of the International Silicon Germanium Technology and Device Meeting, in press.
5. S. Sankaran, K. K. O, IEEE Electron Device Letters, 26 (7), 492-494 (2005).