P-i-n diodes for monolithic millimeter wave BiCMOS applications

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

Volumn 2006, Issue , 2006, Pages

  Orner, Bradley A ^a   Liu, Qizhi ^a   Johnson, Jeffrey ^a   Rassel, Robert ^a   Liu, Xuefeng ^a   Sheridan, David ^a   Joseph, Alvin ^a   Gaucher, Brian ^b  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34247601744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/istdm.2006.246560     Document Type: Conference Paper

References (5)

1. A. Joseph, et al., Silicon Monolithic Integrated Circuits in RF Systems, 1-4 (2004).
2. P. Russer, IEEE Transactions on Microwave Theory and Techniques 46 (5) part 2, 590-603, (1998).
3. M. Khater, et al., Technical Digest of the IEEE International Electron Devices Meeting, 247-250, (2004).
4. R. Tayrani, G. Sakamoto, P. Chan, R. Van Leeuwen, T. Nguyen, Silicon Monolithic Integrated Circuits in RF Systems 126-134 (1998).
5. B. A. Orner, et al., Proceedings of the 2003 Bipolar/BiCMOS circuits and Technology Meeting, 203-204 (2003).