Schottky barrier diodes for millimeter wave SiGe BiCMOS applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2006, Pages

  Rassel, R M ^a   Johnson, J B ^a   Orner, B A ^a   Reynolds, S K ^a   Dahlstrom M E ^a   Rascoe, J S ^a   Joseph, A J ^a   Gaucher, B P ^a   Dunn, J S ^a   Onge, S A St ^a  

^a IBM   (United States)

Author keywords

BiCMOS process technology; Cutoff frequency; Millimeter wave diodes; Millimeter wave technology; Schottky diodes; Terahertz (THz)

Indexed keywords

BICMOS TECHNOLOGY; CUTOFF FREQUENCY; INTEGRATED CIRCUIT LAYOUT; MILLIMETER WAVE DEVICES; SILICON COMPOUNDS;

DEVICE OPTIMIZATION; MILLIMETER WAVE DIODES; MILLIMETER WAVE TECHNOLOGY;

SCHOTTKY BARRIER DIODES;

EID: 39049160587     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2006.311167     Document Type: Conference Paper

References (7)

1. B. Gaucher, et al., "Silicon Germanium Based Millimeter-Wave ICs for Gbps Wireless Communications and Radar Systems", GOMAtech Conference March 2006.
2. M. Khater, et al., Technical Digest of the IEEE International Electron Devices Meeting, 247-250, (2004).
3. B. A. Orner, et al., "p-i-n Diodes for Monolithic Millimeter Wave BiCMOS Applications", ISTDM May 2006H.
4. D. Coolbaugh, et al., Radio Frequency Integrated Circuits (RFIC) Symposium 2002 IEEE, 341-344 (2002).
5. B.Gaucher, et al., "Fully Integrated SiGe mmWave Transmitter and Receiver ICs", ISTDM May 2006.
6. B. A. Orner, et al., Proceedings of the 2003 Bipolar/BiCMOS circuits and Technology Meeting, 203-204 (2003).
7. S. Sankaran, et al, IEEE Electron Device Letters, 26 (7), 492-494 (2005).