Schottky barrier diodes for millimeter wave detection in a foundry CMOS process

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 492-494

  Sankaran, Swaminathan ^a   Kenneth, K O ^a  

^a University of Florida   (United States)

Author keywords

Cutoff frequency; Schottky barrier diodes; Silicon; Terahertz (THz)

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; ELECTRIC BREAKDOWN; INFRARED DETECTORS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; MILLIMETER WAVE DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CUTOFF FREQUENCY; DEVICE DESIGN; INFRARED DETECTION; MILLIMETER WAVE DETECTION; TETRAHERTZ;

SCHOTTKY BARRIER DIODES;

EID: 23044442756     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851127     Document Type: Article

References (13)

1. B. L. Sharma, Metal-Semiconductor Schottky Barrier Junctions and Their Applications. New York: Plenum, 1984.
2. M. Shur, Physics of Semiconductor Devices. Englewood Cliffs, NJ: Prentice-Hall, 1990.
3. S. A. Maas, Microwave Mixers. Boston, MA: Artech House, 1986.
4. S. Mollenkopf and G. M. Rebeiz, "A 22 GHz MIC active receiver/ radiometer," in IEEE MTT-S Dig., vol. 3, 1994, pp. 1347-1350.
5. N. Yutani, H. Yagi, M. Kimata, J. Nakanishi, S. Nagayoshi, and N. Tubouchi, "1040 × 1040 element PtSi schottky-barrier IR image sensor," in Inst. Elect. Eng. Coll. Microwave and Millimeter MIC, Dec. 1991, pp. 175-178.
6. K. M. Strohm, J. Buechler, E. Kasper, J. F. Luy, and P. Russler, "Millimeter wave transmitter and receiver circuits on high resistivity silicon," in Inst. Elect. Eng. Coll. Microwave and Millimeter MIC, Nov. 1988, pp. 1-4.
7. K. M. Strohm, J. Buechler, and E. Kasper, "SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility," IEEE Trans. Microw. Theory Tech., vol. 46, no. 5, pp. 669-676, May 1998.
8. V. Milanovic, M. Gaitan, J. C. Marshall, and M. E. Zaghloul, "CMOS foundary implementation of schottky diodes for RF detection," IEEE Trans. Electron Devices, vol. 43, no. 12, pp. 2210-2214, Dec. 1996.
9. F. J. Huang and K. K. O, "Metal-oxide semiconductor field-effect transistors using schottky barrier drains (SBDR)," Electron. Lett., vol. 33, pp. 2210-2214, 1997.
10. F. J. Huang and K. K. O, "Schottky-clamped nMOS transistors implemented in a conventional 0.8-mm CMOS process," IEEE Electron Device Lett., vol. 19, no. 9, pp. 326-328, Sep. 1998.
11. C. M. Hung, "Investigation of a multiGHz single-chip CMOS PLL frequency synthesizer for wireless applications," Ph.D. dissertation, Univ. Florida, Gainesville, 2000.
12. J. T. Colvin, S. S. Bhatia, and K. K. O, "Effect of substrate resistances on LNA performance and a bondpad structure for reducing the effects in a silicon bipolar technology," IEEE J. Solid-State Circuits, vol. 34, pp. 1339-1344, Sep. 1999.
13. T. E. Kolding, "Shield-based microwave on-wafer device measurements," IEEE Trans. Microw. Theory Tech., vol. 49, no. 6, pp. 1039-1044, Jun. 2001.