Integrated silicon schottky mixer diodes with cutoff frequencies above 1 THz

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 6 II, 2005, Pages 2013-2018

  Morschbach, Michael ^a   Müller, Andreas ^a   Schöllhorn, Claus ^a   Oehme, Michael ^a   Buck, Thomas ^a   Kasper, Erich ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

24 GHz mixer; Cutoff frequency; High resistivity (HR) substrate; Integrated; Monolithic; MOTT operation; Schottky diode; Short distance radar; Silicon

Indexed keywords

CAPACITANCE; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; FREQUENCIES; MONOLITHIC INTEGRATED CIRCUITS; RADAR; SILICON;

24-GHZ MIXER; CUTOFF FREQUENCY; HIGH-RESISTIVITY (HR) SUBSTRATE; MONOLITHIC INTEGRATED SCHOTTKY DIODES; MOTT OPERATION; SHORT DISTANCE RADAR;

SCHOTTKY BARRIER DIODES;

EID: 23144461778     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.848831     Document Type: Conference Paper

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