Study of electrically active defects in n-GaN layer

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 595-600

  Soh, C B ^a   Chi, D Z ^b   Ramam, A ^b   Lim, H F ^a   Chua, S J ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Capacitance transient; DLTs; GaN; Logarithmic capture kinetics; Majority carrier trap

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

ELECTRICALLY ACTIVE DEFECTS;

GALLIUM NITRIDE;

EID: 0035574408     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00025-2     Document Type: Conference Paper

References (9)

1. +-n GaN diode
2. Gallium vacancies and the yellow luminescence in GaN
3. Deep level transient Fourier spectroscopy (DLTFS) - A technique for the analysis of deep level properties
4. Minority- and majority carrier trapping in strain-relaxed GeSi/Si heterostructure diodes grown by rapid thermal chemical vapor deposition
5. Studies of the origin of the yellow luminescence band, the nature of the nonradiative recombination and the origin of persistent photoconductivity in n-GaN films
6. Deep level defects in n-type GaN compensated with Mg
7. Evidence for the electron traps at dislocations in GaAs crystals