Current collapse and reliability of III-N heterostructure field effect transistors

Physica Status Solidi - Rapid Research Letters

Volumn 1, Issue 3, 2007, Pages 116-118

  Koudymov, A ^a   Shur, M S ^a   Simin, G ^b   Gaska, R ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; EXTRAPOLATION; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

CURRENT COLLAPSE; DEGRADATION MECHANISMS; HETEROSTRUCTURES FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 38749117846     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200701047     Document Type: Article

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