Vacancy-type defects in boron-reduced VCz GaAs crystals

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 289-293

  Kiessling, F M ^a   Rudolph, P ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A. Semiconductors; B. Crystal growth; C. Positron annihilation spectroscopy; D. Defects

Indexed keywords

BORON; CATHODOLUMINESCENCE; CONCENTRATION (PROCESS); GALLIUM COMPOUNDS;

BORIC OXIDE ENCAPSULANT; CARBON CONCENTRATION; EXTRINSIC DEFECTS;

DEFECTS;

EID: 38749090926     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.022     Document Type: Article

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