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Materials Science Forum

Volumn 445-446, Issue , 2004, Pages 54-56

Vacancy formation in GaAs under different equilibrium conditions

(4) Bondarenko, V a Gebauer, J b Redmann, F a Krause Rehberg, R a

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

b University of California Berkeley (United States)

Author keywords

Annealing; Arsenic Vacancy; GaAs; Gallium Vacancy

Indexed keywords

ANNEALING; ARSENIC; COMPUTATIONAL METHODS; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; HALL EFFECT; IONIZATION; MATERIALS SCIENCE; MATHEMATICAL MODELS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SCANNING TUNNELING MICROSCOPY; SILICON; THERMAL EFFECTS; THERMODYNAMICS; VAPOR PRESSURE;

ARSENIC VACANCY; GAAS; GALLIUM VACANCY; POSITRON ANNIHILATION LIFETIME SPECTROSCOPY (PALS);

GALLIUM COMPOUNDS;

EID: 3142668614 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.445-446.54 Document Type: Conference Paper

Times cited : (1)

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