Device-relevant point defects in GaAs and InP

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 173-180

  Corbel, C ^a   LeBerre, C ^a   Saarinen, K ^b   Hautojarvi, P ^b  

^a Centre National de la Recherche Scientifique   (France)

^b AALTO UNIVERSITY   (Finland)

Author keywords

Absorption; GaAs; InP; Intrinsic defects; Positron annihilation

Indexed keywords

ABSORPTION; CRYSTAL DEFECTS; IONIZATION OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

POSITRON ANNIHILATION;

SEMICONDUCTOR MATERIALS;

EID: 0031072563     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01973-3     Document Type: Article

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