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Journal of Crystal Growth

Volumn 237-239, Issue 1-4 III, 2002, Pages 1621-1627

Charged native point defects in GaAs and other III-V compounds

(1) Hurle, Don T J a

a UNIVERSITY OF BRISTOL (United Kingdom)

Author keywords

A1. Point defects; A1. Solubility; A2. Single crystal growth; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LATTICE CONSTANTS; MELTING; POINT DEFECTS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SOLUBILITY; THERMODYNAMICS; TITRATION;

CHARGED NATIVE POINT DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036531371 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02355-7 Document Type: Article

Times cited : (11)

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