Low-temperature preparation of sputter-deposited Pb(Zr0.52Ti0.48)O3 thin films through high oxygen-pressure annealing

Journal of Crystal Growth

Volumn 310, Issue 4, 2008, Pages 783-787

  Zhang, X D ^a,c   Meng, X J ^a   Sun, J L ^a   Lin, T ^a   Ma, J H ^a   Chu, J H ^a,b   Kwon, D Y ^c   Kim, Bog G ^c  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b EAST CHINA NORMAL UNIVERSITY   (China)

^c Pusan National University   (South Korea)

Author keywords

A1. Nucleation; A2. Hydrothermal crystal growth; B1. Perovskites; B2. Dielectric materials; B2. Ferroelectric materials; B2. Piezoelectric materials

Indexed keywords

FERROELECTRIC MATERIALS; LEAD COMPOUNDS; LOW TEMPERATURE EFFECTS; NUCLEATION; PEROVSKITE; PIEZOELECTRIC MATERIALS; SPUTTER DEPOSITION;

FERROELECTRIC PROPERTIES; HIGH OXYGEN-PRESSURE PROCESSING (HOPP); HYDROTHERMAL CRYSTAL GROWTH; PEROVSKITE PHASE FORMATION;

THIN FILMS;

EID: 38649107372     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.198     Document Type: Article

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