Fabrication and characterization of 4H-SiC planar MESFET using ion-implantation

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1181-1184

  Na, Hoon Joo ^a   Kim, Dae Hwan ^a   Jung, Sang Yong ^a   Song, In Bok ^a   Um, Myung Yoon ^a   Song, Ho Keun ^a   Jeong, Jae Kyeong ^a   Lee, Jae Bin ^b   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b Korea Sangshin Electronic Co Ltd   (South Korea)

Author keywords

Activation annealing; Ion implantation; MESFET; SiC

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; ION IMPLANTATION; LEAKAGE CURRENTS; METALLIZING; OHMIC CONTACTS; SILICON CARBIDE; SURFACES; TRANSCONDUCTANCE;

ACTIVATION ANNEALING; GATE STRUCTURE; HIGH VOLTAGE OPERATION;

MESFET DEVICES;

EID: 8744246400     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1181     Document Type: Conference Paper

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