Enhanced formation of thermal donors in germanium doped czochraiski silicon pretreated by rapid thermal annealing

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 393-398

  Zhu, Xin ^a   Yang, Deren ^a   Li, Ming ^a   Cui, Can ^a   Wang, Lei ^a   Ma, Xiangyang ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Czochralski silicon; Ge doping; Rapid thermal annealing; Thermal donors

Indexed keywords

CONCENTRATION (PROCESS); HEAT TREATMENT; INFRARED SPECTROSCOPY; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; DEFECTS; GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TEMPERATURE;

CONVENTIONAL FURNACE ANNEALING (CFA); CZOCHRALSKI SILICON; LOW-TEMPERATURE INFRARED SPECTROSCOPY (LT-IR); THERMAL DONORS; CONVENTIONAL FURNACE ANNEALING; GE-DOPING; LOW TEMPERATURE ANNEALING; RAPID THERMAL ANNEALING (RTA); THERMAL DONOR; THERMAL DONOR FORMATION; THERMAL DOUBLE DONORS;

SEMICONDUCTING SILICON; RAPID THERMAL ANNEALING;

EID: 38549085674     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (23)

1. C.M. Carbonaro, V. Fiorentini, and F. Bernardini. Phys. Rev. B. Vol. 66 (2002), p. 233201.
2. X. Yu, D. Yang, X. Ma, H. Li, Y. Shen, D. Tian, L. Li and D. Que, J. Cryst. Growth Vol. 250(2003), p.359.
3. D. Yang, X. Yu, X. Ma, J. Xu, L. Li and D. Que, J. Cryst. Growth Vol. 243 (2002), p. 371.
4. T. Taishi, X. Huang, I. Yonenaga and K. Hoshikawa. Mater. Sci. in Semi. Proc. Vol. 5 (2003), p. 409.
5. E. Hild, P. Gaworzewski, M. Franz and K. Pressel, Appl. Phys. Lett. Vol 72 (1998), p. 1362.
6. H. Li, D. Yang, X. Yu, X. Ma, D. Tian, L. Li and D. Que, J Phys: Condens Matter, Vol. 16 (2004), p. 5745.
7. C. Cui, D. Yang, X. Ma, M. Li, D. Que, Mater. Sci. in Semi. Proc. Vol. 9 (2006), p. 110.
8. C. S. Fuller, N. B. Ditzenberger, N. B. Hannay and E. Buchier, Phys. Rev. Vol. 96 (1954), p. 833.
9. C. S. Fuller and R. A. Logan, J. Appl. Phys. Vol. 28 (1957), p. 1427.
10. J. A. Griffin, J. Hartung, and J. Weber, Mater. Sci. Forum Vol. 619 (1989), p. 38.
11. D. Yang, D. Que, K. Sumino, Appl. Phys. Lett. Vol. 77(1994), p. 943.
12. A. R. Been and R. C. Newman: J. Phys. & Chem. Solids Vol. 33 (1972), p. 255.
13. R. C. Newman, A. S. Oates and F. M. Livingston, J. Phys. C: Solid State Phys. Vol. 16 (1983), p.L667.
14. A. Misiuk, D. Yangb, B. Surma, C.A. Londos, J. Bak-Misiuk and A. Andrianakis, Materials Science in Semiconductor Processing Vol. 9 (2006), p. 82.
15. P. Wagner and J. Hage, Appl. Phys. A: Solid. Surf. Vol. 49(1989), p.123.
16. J. Chen, D. Yang, H. Li, X. Ma and D. Que, J.Cryst. Growth Vol. 291 (2006), p. 66.
17. H. J. Stein, S. K. Hahn and S. C. Shatas, J. Appl. Phys. Vol 59(1986), p. 3495.
18. V. V. Voronkov, G. I. Voronkova, A. V. Batunina, V. N. Golovina, M. G. Mil'vidskii, A. S. Gulyaeva, N. B. Tyurina and L. V. Arapkina, Phys. Sol. Stat. Vol. 42(2000), p. 2022.
19. U. Gosele and T. Y. Tan, Appl. Phys. A: Solids Surf. Vol. 28(1982), p. 79.
20. L. I. Murin, T. Hallberg, V. P. Markevich and J. L. Lindstrom, Phys. Rev. Lett. Vol. 80(1998), p. 93.
21. S. Oberg, C. P. Ewels, R. Jones, T. Hallberg, J. L. Lindstrom, L. I. Murin and P. R. Briddon, Phys. Rev. Lett. Vol. 81(1998), p. 2930.
22. D. Aberg, B. G. Svensson, T. Hallberg and J. L. Lindstrom, Phys. Rev. B. Vol. 58(1998), p. 12944.
23. L. C. Snyder, J. W. Corbett, P. Deak, and R. Wu, Mater. Res. Soc. Symp. Proc. Vol. 104(1988), p. 179.