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Volumn 81, Issue 14, 1998, Pages 2930-2933

First stage of oxygen aggregation in silicon: The oxygen dimer

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Indexed keywords


EID: 4243705162     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.2930     Document Type: Article
Times cited : (58)

References (21)
  • 17
    • 84865530640 scopus 로고
    • Test Method for Substitutional Carbon Atoms of Silicon by Infrared Absorption, F123-86 American Society for Testing and Materials, Philadelphia
    • ASTM Book of Standards, Test Method for Substitutional Carbon Atoms of Silicon by Infrared Absorption, F123-86 (American Society for Testing and Materials, Philadelphia, 1986), p. 252.
    • (1986) ASTM Book of Standards , pp. 252
  • 18
    • 77956737999 scopus 로고    scopus 로고
    • M. Stavola, Semiconductors and Semimetals Series, Academic Press, Boston
    • R. Jones and P. R. Briddon, in Identification of Defects in Semiconductors, M. Stavola, Semiconductors and Semimetals Series Vol. 51A (Academic Press, Boston, 1998), Chap. 6, p. 287.
    • (1998) Identification of Defects in Semiconductors , vol.51A , Issue.6 , pp. 287
    • Jones, R.1    Briddon, P.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.