Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors

Journal of the Electrochemical Society

Volumn 155, Issue 3, 2008, Pages

  Koh, Alvin Tian Yi ^a   Lee, Rinus Tek Po ^a,d   Lim, Andy Eu Jin ^a   Lai, Doreen Mei Ying ^b   Chi, Dong Zhi ^b   Hoe, Keat Mun ^c   Balasubramanian, N ^c   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CONTACT RESISTANCE; OPTIMIZATION; SILICIDES; THIN FILMS;

ELECTRON BARRIER; NICKEL ALLOY FILM;

FIELD EFFECT TRANSISTORS;

EID: 38349166778     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2823567     Document Type: Article

References (15)

1. S. D. Kim, C. M. Park, and J. C. S. Woo, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.987118, 49, 467 (2002).
2. J. Kedzierski, M. Ieong, E. Nowak, T. S. Kanarsky, Y. Zhang, R. Roy, D. Boyd, D. Fried, and P. H.-S. Wong, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2003.811412, 50, 952 (2003).
3. R. T. P. Lee, T. Y. Liow, K. M. Tan, A. E. J. Lim, H. S. Wong, P. C. Lim, D. M. Y. Lai, G. Q. Lo, C. H. Tung, G. Samudra, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2006, 851.
4. Y. H. Kim, C. Cabral, Jr., E. P. Gusev, R. Carruthers, L. Gignac, M. Gribelyuk, E. Cartier, S. Zafar, M. Copel, V. Narayanan, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 2005, 642.
5. M. C. Sun, M. J. Kim, J.-H. Ku, K. J. Roh, C. S. Kim, S. P. Youn, S.-W. Jung, S. Choi, N. I. Lee, H.-K. Kang, Symposium on VLSI Technology, pp. 81-83 (2003).
6. R. T. P. Lee, T.-Y. Liow, K.-M. Tan, A. E.-J. Lim, H.-S. Wong, P.-C. Lim, D. M. Y. Lai, G.-Q. Lo, C.-H. Tung, G. Samudra, Digest of Technical Papers, Symposium on VLSI Technology, p. 108 (2007).
7. H. Iwai, T. Ohguro, and S.-I. Ohmi, Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(01)00684-0, 60, 157 (2002).
8. K. W. Richter and H. Ipser, Intermetallics IERME5 0966-9795 10.1016/S0966-9795(02)00184-X, 11, 101 (2003).
9. K. W. Richter and K. Hiebl, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1594289, 83, 497 (2003).
10. C. Lavoie, F. M. d'Heurle, C. Detavernier, and C. Cabral, Jr., Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(03)00380-0, 70, 144 (2003).
11. T. P. Nolan, R. Sinclair, and R. Beyers, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351333, 71, 720 (1992).
12. C. Detavernier, A. Özcan, C. Lavoie, J.-J. Sweet, and J. M. E. Harper, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172, 745, 135 (2002).
13. C. Lavoie, C. Detavernier, Jr., C. Cabral, F. M. d'Heurle, A. J. Kellock, J. Jordan-Sweet, and J. M. E. Harper, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2006.09.006, 83, 2042 (2006).
14. S. Shingubara, H. Kotani, H. Sakaue, F. Nishiyama, and T. Takahagi, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.591126, 17, 2553 (1999).
15. Q. Zeng, S.-W. Ma, and Y.-R. Zheng, Trans. Nonferrous Met. Soc. China TNMCEW 1003-6326, 13, 899 (2003).