Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 642-645

  Kim, Y H ^a   Cabral Jr , C ^a   Gusev, E P ^a   Carruthers, R ^a   Gignac, L ^a   Gribelyuk, M ^a   Cartier, E ^a   Zafar, S ^a   Copel, M ^a   Narayanan, V ^a   Newbury, J ^a   Price, B ^a   Acevedo, J ^a   Jamison, P ^a   Linder, B ^a   Natzle, W ^a   Cai, J ^a   Jammy, R ^a   Ieong, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; FERMI LEVEL; NICKEL ALLOYS; PERMITTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

FUNCTION MODULATION; GATE STACKS; WORKFUNCTION ENGINEERING;

GATES (TRANSISTOR);

EID: 33847749884     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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6. J. A. Kittl et al. VLSI Symp. Proc., p 72 (2005)