Thermally Robust Ta-Doped Ni SALICIDE Process Promising for Sub-50nm CMOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 81-82

  Sun, M C ^a   Kim, M J ^a   Ku, J H ^a   Roh, K J ^a   Kim, C S ^a   Youn, S P ^a   Jung, S W ^a   Choi, S ^a   Lee, N I ^a   Kang, H K ^a   Suh, K P ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

NiTa alloy; SALICIDE

Indexed keywords

DOPING (ADDITIVES); GATES (TRANSISTOR); LEAKAGE CURRENTS; NICKEL COMPOUNDS; ROBUSTNESS (CONTROL SYSTEMS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; CMOS INTEGRATED CIRCUITS; NICKEL; SILICIDES; TANTALUM ALLOYS; TITANIUM ALLOYS;

SHEET RESISTANCE;

MOSFET DEVICES; BINARY ALLOYS;

CMOSFETS; DEVICE APPLICATION; DEVICE FABRICATIONS; DRIVE CURRENTS; JUNCTION LEAKAGE CURRENTS; NICKEL SILICIDE; NITA ALLOY; PERFORMANCE; SELF-ALIGNED; SELF-ALIGNED SILICIDE;

EID: 0141761557     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J.-H. Chung et al., Adv. Metallization Conference, p495, 2000.
2. P. S. Lee et al., J. Electrochem. Soc., vol.149, pG331,2002.
3. J.-H. Ku et al., Symp. on VLSI Tech., p114, 2000.
4. C.-J. Choi et al., 199th ECS Proceeding, vol.2001-2, p565, 2001