Structures and properties of La- and Sm-doped BaTi O3 sputtered films: Post-annealing and dopant effects

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Wu, C H ^a   Chu, J P ^b   Chang, W Z ^a   John, V S ^a,d   Wang, S F ^c   Lin, C H ^c  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d TDMNS College   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; DOPING (ADDITIVES); LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; SAMARIUM COMPOUNDS; SPUTTER DEPOSITION;

PHASE FORMATION; POST-ANNEALING;

THIN FILMS;

EID: 38149045843     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2827501     Document Type: Article

References (24)

1. T. Kuroiwa, Y. Tsunemine, T. Horikawa, T. Makita, J. Tanimura, N. Mikami, and K. Sato, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.33.5187 33, 5187 (1994).
2. J. Im, O. Auciello, P. K. Baumann, S. K. Streiffer, D. Y. Kaufman, and A. R. Krauss, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125839 76, 625 (2000).
3. C. B. Samantaray, A. Dhar, M. L. Mukherjee, D. Bhattacharya, and S. K. Ray, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/S0921-5107(01)00753-X 88, 14 (2002).
4. C. H. Wu, J. P. Chu, and S. F. Wang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1984083 98, 026109 (2005).
5. G. Yang, H. Gu, J. Zhu, and Y. Wang, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(02)01416-1 242, 172 (2002).
6. L. Goux, M. Gervais, A. Catherinot, C. Champeaux, and F. Sabary, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/S0022-3093(02)00985-7 303, 194 (2002).
7. R. Liedtke, M. Grossmann, and R. Waser, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1311946 77, 2045 (2000).
8. F. Yan, P. Bao, Z. Zhang, J. Zhu, Y. Wang, H. L. W. Chan, and C. L. Choy, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(00)01230-X 375, 184 (2000).
9. W. Hofman, S. Hoffmann, and R. Waser, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(96)09508-9 305, 66 (1997).
10. J. P. Chu, S. F. Wang, S. J. Lee, and C. W. Chang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1321772 88, 6086 (2000).
11. W. Hofman, S. Hoffmann, and R. Waser, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(96)09508-9 305, 66 (1997).
12. C. J. Peng and S. B. Krupanidhi, J. Mater. Res. JMREEE 0884-2914 10.1557/JMR.1995.0708 10, 708 (1995).
13. S. F. Wang, J. P. Chu, C. C. Lin, and T. Mahalingam, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1947390 98, 014107 (2005).
14. J.-I. Itoh, D.-C. Park, N. Ohashi, I. Sakaguchi, I. Yashima, H. Haneda, and J. Tanaka, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.41.3798 41, 3798 (2002).
15. K. Takada, E. Chang, and D. M. Smith, J. Am. Ceram. Soc. JACTAW 0002-7820 19, 147 (1985).
16. S. F. Wang, Jinn P. Chu, C. C. Lin, and T. Mahalingam, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1947390 98, 014107 (2005).
17. P. C. Joshi and M. W. Cole, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126953 77, 289 (2000).
18. D. Kim, Appl. Surf. Sci. ASUSEE 0169-4332 218, 78 (2003).
19. C. S. His, C. Y. Chen, N. C. Wu, and M. C. Wang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1574179 94, 598 (2003).
20. M. S. Tsai, S. C. Sun, and T. Y. Tseng, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.365665 82, 3482 (1997).
21. C. C. Hwang, C. C. Jaing, M. J. Lai, J. S. Chen, S. Huang, M. H. Juang, and H. C. Cheng, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.1391209 3, 563 (2000).
22. S. S. Kim and C. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125075 75, 2554 (1999).
23. S. Y. Lee and T. Y. Tseng, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1458067 80, 1797 (2002).
24. The Materials Science of Thin Films, Milton Ohring, 1992.