Microstructure and electrical properties of Ho-doped BaTiO 3-sputtered films

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Wu, C H ^a   Chu, J P ^a   Wang, S F ^b  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; DOPANT CONCENTRATION; DYNAMIC RANDOM ACCESS MEMORIES (DRAM); LEAKAGE CURRENT DENSITY;

CRYSTALLINE MATERIALS; HOLMIUM; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MICROSTRUCTURE; PERMITTIVITY; RANDOM ACCESS STORAGE; SEMICONDUCTOR DOPING; STOICHIOMETRY; SURFACE ROUGHNESS; THIN FILMS;

BARIUM COMPOUNDS;

EID: 23844489926     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1984083     Document Type: Article

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