Initial stages of growth of heteroepitaxial yttria-stabilized zirconia films on silicon substrates

Journal of the Electrochemical Society

Volumn 147, Issue 12, 2000, Pages 4541-4545

  Bunt, P ^a   Varhue, W J ^a   Adams, E ^b   Mongeon, S ^b  

^a UNIVERSITY OF VERMONT   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; GROWTH (MATERIALS); HIGH TEMPERATURE SUPERCONDUCTORS; PLASMA DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HETEROEPITAXIAL FILM; SILICON SUBSTRATE;

ZIRCONIUM COMPOUNDS;

EID: 0034504048     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1394098     Document Type: Article

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