Raman scattering study of carrier-transport and phonon properties of 4H-SiC crystals with graded doping

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 24, 2007, Pages

  Nakashima, S ^a   Kitamura, T ^a   Mitani, T ^a,c   Okumura, H ^a   Katsuno, M ^b   Ohtani, N ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

^c TORAY RESEARCH CENTER INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 37749039153     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.245208     Document Type: Article

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