Raman characterization of local electrical properties and growth process in modulation-doped 6H-SiC crystals

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3547-3552

  Nakashima, S ^a   Harima, H ^b   Ohtani, N ^c   Katsuno, M ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DAMPING; IMAGE ANALYSIS; PHONONS; RAMAN SPECTROSCOPY; SUBLIMATION;

LO PHONON PLASMON COUPLED (LOPC) MODE; SPATIAL DISTRIBUTION;

SILICON CARBIDE;

EID: 1942501261     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1655682     Document Type: Article

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