Weak localization and electron-electron interaction effects in Al 0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

Chinese Journal of Physics

Volumn 45, Issue 6 I, 2007, Pages 616-621

  Chen, Kuang Yao ^a   Liang, C T ^a   Chen, N C ^b   Chang, P H ^b   Chang, Chin An ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 37749033965     PISSN: 05779073     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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