Simulation of a low-voltage organic transistor compatible with printing methods

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 276-282

  Takshi, Arash ^a   Dimopoulos, Alexandros ^a   Madden, John D ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Organic field effect transistor (OFET); Organic metal semiconductor FET (OMESFET); Organic Schottky junction; Regioregular poly (3 hexylthiophene) (rr P3HT)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING ORGANIC COMPOUNDS; THICK FILMS;

ORGANIC FIELD-EFFECT TRANSISTOR; ORGANIC METAL-SEMICONDUCTOR FET; ORGANIC SCHOTTKY JUNCTION;

FIELD EFFECT TRANSISTORS;

EID: 37749001698     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.910615     Document Type: Article

References (42)

1. H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E. P. Woo, "High-resolution inkjet printing of all- polymer transistor circuits," Science, vol. 290, no. 5499, pp. 2123-2126, Dec. 2000.
2. S. K. Park, Y. H. Kim, J. I. Han, D. G. Moon, W. K. Kim, and M. G. Kwak, "Electrical characteristics of poly (3-hexylthiophene) thin film transistors printed and spin-coated on plastic substrates," Synt. Met., vol. 139, no. 2, pp. 377-384, Sep. 2003.
3. K. Bock, "Polymer electronics systems - Polytronics," Proc. IEEE vol. 93, no. 8, pp. 1400-1406, Aug. 2005.
4. J. M. Shaw and P. F. Seidler, "Organic electronics: Introduction," IBM J. Res. Develop., vol. 45, no. 1, p. 3, 2001.
5. P. Weiss, "Beyond bar codes: Tuning up plastic radio labels," Sci. News, vol. 169, p. 83, 2006.
6. J. Lee, K. Kim, J. H. Kim, S. Im, and D. Y. Jung, "Optimum channel thickness in pentacene-based thin-film transistors," Appl. Phys. Lett., vol. 82, no. 23, pp. 4169-4171, Jun. 2003.
7. A. Facchetti, M. H. Yoon, and T. J. Marks, "Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics," Adv. Mater., vol. 17, no. 4, pp. 1705-1725, Jul. 2005.
8. 2 /V · s," Appl. Phys. Lett., vol. 83, no. 17, pp. 3504-3506, Oct. 2003.
9. S. P. Speakman, G. G. Rozenberg, K. J. Clay, W. I. Milne, A. Ille, I. A. Gardner, E. Bresler, and J. H. G. Steinke, "High performance organic semiconducting thin films: Ink jet printed polythiophene [rr-P3HT]," Organic Electron., vol. 2, no. 2, pp. 65-73, Sep. 2001.
10. G. Horowitz, "Organic field-effect transistors," Adv. Mater., vol. 10, no. 5, pp. 365-377, Mar. 1998.
11. T. Lindner, G. Paasch, and S. Scheinert, "Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors," J. Mater. Res., vol. 19, no. 7, pp. 2014-2027, Jul. 2004.
12. E. J. Meijer, C. Detcheverry, P. J. Baesjou, E. van Veenendaal, D. M. de Leeuw, and T. M. Klapwijk, "Dopant density determination in disordered organic field-effect transistors," J. Appl. Phys., vol. 93, no. 8, pp. 4831-4835, Apr. 2003.
13. A. N. Aleshin, H. Sandberg, and H. Stubb, "Two-dimensional charge carrier mobility studies of regioregular P3HT," Synt. Met., vol. 121, no. 1, pp. 1449-1450, Mar. 2001.
14. S. R. Forrest, "The path to ubiquitous and low-cost organic electronic appliances on plastic," Nature, vol. 428, no. 6986, pp. 911-918, Apr. 2004.
15. M. J. Panzer, C. R. Newman, and C. D. Frisbie, "Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric," Appl. Phys. Lett., vol. 86, no. 10, p. 103 503-3, Mar. 2005.
16. J. H. Schon, C. Kloc, and B. Batlogg, "On the intrinsic limits of pentacene field-effect transistors," Organic Electron., vol. 1, no. 1, pp. 57-64, Dec. 2000.
17. M. Halik, H. Klauk, U. Zschieschang, G. Schmid, C. Dehm, M. Schutz, S. Maisch, E Effenberger, M. Brunnbauer, and E Stellacci, "Low-voltage organic transistors with an amorphous molecular gate dielectric," Nature, vol. 431, no. 7011, pp. 963-966, Oct. 2004.
18. H. T. Yutaka Ohmori, K. Muro, M. Uchida, T. Kawai, and K. Yoshino, "Fabrication and characteristics of Schottky gated poly(3-alkylthiophene) field effect transistors," Jpn. J. Appl. Phys., vol. 30, no. 4A, pp. L610-L611, Apr. 1991.
19. S. M. Sze and K. N. Kwok, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ: Wiley, 2006.
20. R. Gupta, S. C. K. Misra, B. D. Malhotra, N. N. Beladakere, and S. Chandra, "Metal/semiconductive polymer Schottky device," Appl. Phys. Lett., vol. 58, no. 1, pp. 51-52, Jan. 1991.
21. W. Bruning, S. Berleb, and A.G. Muck, "Device physics oforganic lightemitting diodes based on molecular materials," Organic Electron., vol. 2, no. 1, pp. 1-36, Mar. 2001.
22. C. J. Brabec, N. S. Sariciftci, and J. C. Hummelen, "Plastic solar cells," Adv. Funct. Mater., vol. 11, no. 1, pp. 15-26, 2001.
23. D. L. Pulfrey and N. G. Tarr, Introduction to Microelectronic Devices Englewood Cliffs, NJ: Prentice-Hall, 1989, ch. 9.
24. K. F. Teng and R. W. Vest, "Application of ink jet technology on photo-voltaic metallization," IEEE Electron Device Lett., vol. 9, no. 11, pp. 591-593, Nov. 1988.
25. H. Cheong Mm and S. Wagner, "Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors," IEEE Electron Device Lett., vol. 21, no. 8, pp. 384-386, Aug. 2000.
26. [Online]. Available: http://nobelprize.org/nobel_prizes/chemistry/ laureates/2000/chemadv.pdf
27. K. Morigaki, Physics of Amorphous Semiconductors. Singapore: World Scientific, 1999.
28. W. B. Jackson, "Connection between the Meyer-Neldel relation and multiple-trapping transport," Phys. Rev. B, Condens. Matter, vol. 38, no. 5, pp. 3595-3598, Aug. 1988.
29. S. Scheinert, G. Paasch, M. Schrodner, H. K. Roth, S. Sensfuss, and T. Doll, "Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator," J. Appl. Phys., vol. 92, no. 1, pp. 330-337, Jul. 2002.
30. M. Zhu, G. Liang, T. Cw, and K. Varahramyan, "Depletion-mode n-channel organic field-effect transistors based on NTCDA," Solid State Electron., vol. 47, no. 10, pp. 1855-1858, Oct. 2003.
31. [Online]. Available: http://www.synopsys.com/products/ntixedsignal/ taurus/device_sim_ds.html
32. J. F. Chang, B. Sun, D. W. Breiby, M. M. Nielsen, T. I. Solling, M. Giles, I. McCulloch, and H. Sirringhaus, "Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents," Chem. Mater., vol. 16, no. 23, pp. 4772-4776, 2004.
33. T. A. Chen, X. Wu, and R. D. Rieke, "Regiocontrolled synthesis of poly(3-alkylthiophenes) mediated by Rieke zinc: Their characterization and solid-state properties," J. Amer. Chem. Soc., vol. 117, no. 1, pp. 233-244, 1995.
34. A. J. Cascio, J. E. Lyon, M. M. Beerbom, R. Schlaf, Y. Zhu, and S. A. Jenekhe, "Investigation of a polythiophene interface using photo-emission spectroscopy in combination with electrospray thin-film deposition," Appl. Phys. Lett., vol. 88, no. 6, p. 062 104-3, Feb. 2006.
35. C. Tanase, E. J. Meijer, P. W. M. Blom, and D. M. de Leeuw, "Unification of the hole transport in polymeric field-effect transistors and light-emitting di odes," Phys. Rev. Lett., vol. 91, no. 21, p. 216 601, Nov. 2003.
36. G. Liang, T. Cw, and K. Varahramyan, "Fabrication and electrical characteristics of polymer-based Schottky diode," Solid State Electron., vol. 47, no. 4, pp. 691-694, Apr. 2003.
37. D. B. A. Rep, A. F. Morpurgo, and T. M. Klapwijk, "Doping-dependent charge injection into regioregular poly(3-hexylthiophene)," Organic Electron., vol. 4, no. 4, pp. 201-207, Dec. 2003.
38. A. Knobloch, A. Manuelli, A. Bernds, and W. Clemens, "Fully printed integrated circuits from solution processable polymers," J. Appl. Phys., vol. 96, no. 4, pp. 2286-2291, Aug. 2004.
39. V. R. Nikitenko, H. Heil, and H. von Seggern, "Space-charge limited current in regioregular poly-3-hexyl-thiophene," J. Appl. Phys., vol. 94, no. 4, pp. 2480-2485, Aug. 2003.
40. M. Raja, G. C. R. Lloyd, N. Sedghi, W. Eccleston, R. Di Lucrezia, and S. J. Higgins, "Conduction processes in conjugated, highly regio-regular, high molecular mass, poly(3-hexylthiophene) thin-film transistors," J. Appl. Phys., vol. 92, no. 3, pp. 1441-1445, Aug. 2002.
41. H. Sirringhaus, N. Tessler, and R. H. Friend, "Integrated optoelectronic devices based on conjugated polymers," Science, vol. 280, no. 5370, pp. 1741-1744, Jun. 1998.
42. P. Stallinga, H. L. Gomes, M. Murgia, and K. Mullen, "Interface state mapping in a Schottky barrier of the organic semiconductor terrylene," Organic Electron., vol. 3, no. 1, pp. 43-51, Mar. 2002.