Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors

IEEE Electron Device Letters

Volumn 21, Issue 8, 2000, Pages 384-386

  Hong, Cheong Min ^b   Wagner, Sigurd ^a  

^a Princeton University   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ETCHING; METALLIZING; PRINTING; THIN FILM TRANSISTORS;

INKJET PRINTING; SOURCE/DRAIN METALLIZATION;

COPPER;

EID: 0034251006     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.852958     Document Type: Article

References (15)

1. S. Venkatesan et al., "A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization," in IEDM Tech. Dig., 1997, pp. 769-772.
2. D. Edelstein et al., "Full copper wiring in a sub-0.25 μm CMOS ULSI technology," in IEDM Tech. Dig., 1997, pp. 773-776.
3. W. E. Howard, "Limitations and prospects of a-Si:H TFTs," J. Soc. Inform. Display, vol. 3/3, pp. 127-132, 1995.
4. H. Sirringhaus, S. D. Theiss, A. Kahn, and S. Wagner, "Self-passivated copper gates for amorphous silicon thin-film transistors," IEEE Electron Device Lett., vol. 18, pp. 388-390, 1997.
5. H. Gleskova, S. Wagner, and D. S. Shen, "Photoresist-free fabrication process for a-Si:H thin film transistors," J. Non-Cryst. Solids, vol. 227-230, pp. 1217-1220, 1998.
6. E. Kaneko, "Giant electronics technology," in Thin Film Transistor Technologies III: Electrochem. Soc., 1996, vol. PV96-23, pp. 8-20.
7. T. R. Hebner et al., "Ink-jet printing of doped polymers for organic light emitting devices," Appl. Phys. Lett., vol. 72, pp. 519-521, 1998.
8. S. Wagner, H. Gleskova, J. C. Sturm, and Z. Suo, "Novel processing technologies for macroelectronics," in Technology and Applications of Hydrogenated Amorphous Silicon, R. A Street, Ed, Berlin, Germany: Springer-Verlag, 2000, vol. 37, pp. 222-251.
9. Z. Bao, J. A. Rogers, and H. E. Katz, "Printable organic and polymeric semiconducting materials and devices," J. Mater. Chem., vol. 9, pp. 1895-1904, 1999.
10. F. Garnier, R. Hajlaoui, and A. Yassar, "All-polymer field-effect transistor realized by printing techniques," Science, vol. 265, pp. 1684-1686, 1994.
11. Y. Mikami et al., "A new patterning process concept for large-area transistor circuit fabrication without using an optical mask aligner," IEEE Trans. Electron Devices, vol. 41, pp. 306-314, 1994.
12. D. P. Graddon, "The absorption spectra of complex salts-IV. Cupric alkanoates," J. Inorg. Nucl. Chem., vol. 17, pp. 222-231, 1961.
13. 4 in thin films: The photochemical formation of high-quality films of copper and copper(I) oxide. Demonstration of a novel lithographic technique for the patterning of copper," J. Amer. Chem. Soc., vol. 118, pp. 237-238, 1996.
14. C. M. Hong, H. Gleskova, and S. Wagner, "Direct writing and lift-off patterning of copper lines at 200°C maximum process temperature," in Proc. Materials Research Soc. Symp., vol. 471, 1997, pp. 35-40.
15. H. Gleskova, R. Könenkamp, S. Wagner, and D. S. Shen, "Electrophotographically patterned thin-film silicon transistors," IEEE Electron Device Lett., vol. 17, pp. 264-266, 1996.