Elastic constants of defected and amorphous silicon with the environment-dependent interatomic potential

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 13, 2004, Pages

  Allred, Clark L ^a,b,c   Yuan, Xianglong ^a   Bazant, Martin Z ^d   Hobbs, Linn W ^a  

^a USA   (United States)

^b CHARLES STARK DRAPER LABORATORY   (United States)

^c AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

AB INITIO CALCULATION; ARTICLE; ATOM; COVALENT BOND; ELASTICITY; ELECTRONICS; MOLECULAR DYNAMICS; RADIATION INJURY; TEMPERATURE; YOUNG MODULUS;

EID: 37649028861     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.134113     Document Type: Article

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