Amorphous-silicon thin-film transistors made at 28°C on clear-plastic substrates by interfacial stress engineering

Journal of the Society for Information Display

Volumn 15, Issue 3, 2007, Pages 167-176

  Long, Ke ^a   Cheng, I Chun ^a   Kattamis, Alexis ^a   Gleskova, Helena ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

Amorphous silicon; Flexible; Plastic substrate; Thermal stress; Thin film transistors

Indexed keywords

AMORPHOUS; CLEAR PLASTICS; COEFFICIENTS OF THERMAL EXPANSIONS; DESIGN GUIDELINES; FLEXIBLE; FLEXIBLE DISPLAYS; HIGH TEMPERATURES; INTERFACIAL STRESSES; MECHANICAL INTERACTIONS; PLASTIC SUBSTRATE; PLASTIC SUBSTRATES; PROCESS TEMPERATURES; SILICON NITRIDE (SIN; SUBSTRATE MATERIALS; TRANSITION TEMPERATURES;

ABS RESINS; CRACKING (CHEMICAL); ELASTOMERS; GLASS TRANSITION; LEAKAGE CURRENTS; NITRIDES; ORGANIC POLYMERS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA STABILITY; PLASTIC PRODUCTS; PLASTICITY; POLYMERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; SILICON NITRIDE; STRESSES; SUBSTRATES; THERMAL EXPANSION; THERMAL SPRAYING; THERMAL STRESS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS SILICON;

EID: 37549043267     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.2716494     Document Type: Article

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