Limiting factors for electron beam lithography when using ultra-thin hydrogen silsesquioxane layers

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 6, Issue 4, 2007, Pages

  Grigorescu, Anda E ^a   Van Der Krogt, Marco C ^b   Hagen, Cornelis W ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Development process; Electron beam nanolithography; Electron beam resist; High resolution; Hydrogen silsesquioxane

Indexed keywords

HYDROGEN INORGANIC COMPOUNDS; POTASSIUM COMPOUNDS; ULTRATHIN FILMS;

DEVELOPMENT PROCESS; ELECTRON BEAM NANOLITHOGRAPHY; ELECTRON BEAM RESISTS; HYDROGEN SILSESQUIOXANE;

ELECTRON BEAM LITHOGRAPHY;

EID: 37549039824     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.2816459     Document Type: Article

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