Influence of InGaN channel thickness on electrical characteristics of AlGaN/InGaN/GaN HFETs

Electronics Letters

Volumn 42, Issue 12, 2006, Pages 718-719

  Wang, R L ^a   Su, Y K ^b   Chen, K Y ^b  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

ALGAN/INGAN/GAN HFET; CARRIER CONFINEMENT LAYERS; CHANNEL THICKNESS; INTRINSIC TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 33745107903     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060674     Document Type: Article

References (3)

1. Yu, E.T., Sullivan, G.J., Asbeck, P.M., Wang, C.D., Qiao, D., and Lau, S.S.: ' Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field effect transistors ', Appl. Phys. Lett., 1997, 71, p. 2794-2796
2. Rumyantsev, S.L., Pala, N., Shur, M.S., and Gaska, R.: ' Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors ', J. Appl. Phys., 2001, 80, p. 310
3. Su, Y.-K., Wei, S.-C., and Wang, R.-L.: ' Flicker noise of GaN-based heterostructure field effect transistors with Si-doped AlGaN carrier injection layer ', IEEE Electron Device Lett., 2003, 24, p. 622-624