Smart Cut™ transfer of 300 mm (110) and (100) Si layers for hybrid orientation technology

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 98-99

  Bourdelle, K K ^a   Akatsu, T ^a   Sousbie, N ^a   Letertre, F ^a   Delprat, D ^a   Neyret, E ^a   Mohamed, N Ben ^a   Suciu, G ^a   Lagahe Blanchard, C ^b   Beaumont, A ^b   Charvet, A M ^b   Papon, A M ^b   Kernevez, N ^b   Maleville, C ^a   Mazure, C ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK PROPAGATION; DATA ACQUISITION; ELECTRIC PROPERTIES; HEAT TREATMENT; HOLE MOBILITY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL MOBILITY; HYBRID ORIENTATION; ISOTHERMAL ANNEALS; SMART CUT™ TRANSFER;

SILICON WAFERS;

EID: 20144388572     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. M. Yang et al., IEDM Tech. Dig., p. 423, 2003.
3. C. Maleville and C. Mazuré, Solid State Electron., vol. 48, p. 1055, 2004.
4. Y. Zeng et al., J. Appl. Phys., vol. 89, p. 2972, 2001.