Structural and electrical properties of threading dislocations in GaN

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 1203-1210

  Elsner, J ^f   Jones, R ^a   Sitch, P K ^f   Frauenheim, Th ^b   Heggie, M I ^c   Oberg S ^d   Briddon, P R ^e  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF SUSSEX   (United Kingdom)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

^f NONE

Author keywords

Density functional theory; GaN; Threading dislocations

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH;

DENSITY FUNCTIONAL THEORY; GALLIUM NITRIDE; THREADING EDGE DISLOCATIONS; THREADING SCREW DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 3743088241     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1203     Document Type: Article

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