Er-doped Al2O3 thin films deposited by high-vacuum chemical vapor deposition (HV-CVD)

Materials Science and Engineering: B

Volumn 146, Issue 1-3, 2008, Pages 35-40

  Multone, X ^a   Luo, Y ^a   Hoffmann, P ^a  

^a EPFL   (Switzerland)

Author keywords

Alumina; Aluminum isopropoxide; Amorphous Al2O3; Erbium; Homogenous deposit; HV CVD; Thin films; Wafer scale

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); OPTOELECTRONIC DEVICES; VACUUM DEPOSITION; WAFER BONDING;

ALUMINUM ISOPROPOXIDE; HOMOGENOUS DEPOSITS; OPTICAL GUIDING PROPERTIES; TETRAMETHYL-HEPTANEDIONATE;

THIN FILMS;

EID: 37349014016     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.07.086     Document Type: Article

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