Deposition of Er:Al2O3 Films and Photoluminescence Characteristics

Chinese Physics Letters

Volumn 20, Issue 9, 2003, Pages 1613-1615

  Li, Cheng Ren ^a,b   Song, Chang Lie ^b   Li, Shu Feng ^b   Rao, Wen Xiong ^b  

^a LIAONING NORMAL UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; BIAS VOLTAGE; ERBIUM COMPOUNDS; PHOTOLUMINESCENCE; SUBSTRATES;

ANNEALING TEMPERATURES; CLOSED FIELD UNBALANCED MAGNETRON SPUTTERING; FILM CHARACTERISTICS; GAS FLOW SPUTTERING; PEAK INTENSITY; PHOTOLUMINESCENCE CHARACTERISTICS; PROCESS PARAMETERS; SILICON SUBSTRATES; SPUTTERING GAS PRESSURE; SUBSTRATE BIAS VOLTAGES;

ALUMINUM OXIDE;

EID: 0141567600     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/9/359     Document Type: Article

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