Metal-organic chemical vapor deposition of aluminum from dimethylethylamine alane

Thin Solid Films

Volumn 312, Issue 1-2, 1998, Pages 259-264

  Yun, Jong Ho ^a   Kim, Byoung Youp ^a,b   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Aluminium; Aluminum film; Chemical vapour deposition; Dimethylethylamine alane; Metal organic chemical vapor deposition; Metallization; Organometallic vapour deposition

Indexed keywords

ALUMINUM; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN SIZE AND SHAPE; METALLOGRAPHIC MICROSTRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLICS; SPUTTER DEPOSITION; SURFACE ROUGHNESS;

DIMETHYLETHYLAMINE ALANE;

METALLIC FILMS;

EID: 0031697344     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(97)00333-7     Document Type: Article

References (33)

1. D. Pramanic, A.N. Saxena, Solid State Technol. 26 (1983) 127.
2. P.B. Ghate, Solid State Technol. 26 (1983) 113.
3. C.M. McConica, K. Cooper, J. Electrochem. Soc. 135 (1988) 1003.
4. R.A. Levy, M.L. Green, P.K. Gallagher, J. Electrochem. Soc. 131 (1984) 2174.
5. K. Masu, K. Tsubouchi, N. Shigeeda, T. Matano, N. Mikoshiba, Appl. Phys. Lett. 56 (1990) 1543.
6. K. Tsubounchi, K. Masu, N. Shigeeda, T. Matano, Y. Hiura, N. Mikoshiba, Appl. Phys. Lett. 57 (1990) 1221.
7. P.M. Elms, R.N. Lamb, P.J. Pigram, M.G. Gardiner, B.J. Wood, C.L. Raston, Chem. Mater. 6 (1994) 1059.
8. M.E. Gross, C.G. Fleming, K.P. Cheung, L.A. Heimbrook, J. Appl. Phys. 69 (1991) 2589.
9. M.G. Simmonds, I. Taupin, W.L. Gladfelter, Chem. Mater. 6 (1994) 935.
10. M.L. Green, R.A. Levy, R.G. Nuzzo, E. Coleman, Thin Solid Films 114 (1984) 367.
11. Y. Zhou, M.A. Henderson, J.M. White, Surf. Sci. 221 (1989) 160.
12. E. Kondoh, T. Ohta, J. Vac. Sci. Technol. A13 (1995) 2863.
13. M. Hanabusa, K. Hayakawa, A. Oikawa, K. Maeda, Jpn. J. Appl. Phys. 27 (1988) L1392.
14. K. Tsubouchi, K. Masu, J. Vac. Sci. Technol. A10 (1992) 856.
15. D.B. Beach, S.E. Blum, F.K. LeGoues, J. Vac. Sci. Technol. A7 (1989) 3117.
16. X. Li, B.-Y. Kim, S. Rhee, Appl. Phys. Lett. 67 (1995) 3426.
17. B.-Y. Kim, X. Li, S. Rhee, Appl. Phys. Lett. 68 (1996) 3567.
18. M.G. Simmonds, W.L. Gladfelter, R. Nagaraja, W.W. Szymanski, K.-H. Ahn, P.H. McMurry, J. Vac. Sci. Technol. A9 (1991) 2782.
19. M.G. Simmonds, I. Taupin, W.L. Gladfelter, Chem. Mater. 6 (1994) 935.
20. J.-H. Yun, M.-Y. Park, S. Rhee, J. Vac. Sci. Technol. (in press).
21. J.-H. Yun, S. Rhee, J. Mater. Sci. (in press).
22. J.M. Mundenar, R. Murphy, K.D. Tsuei, E.W. Plummer, Chem. Phys. Lett. 143 (1988) 593.
23. L.H. Dubois, B.R. Zegarski, C.-T. Kao, R.G. Nuzzo, Surf. Sci. 236 (1990) 77.
24. L.H. Dubois, B.R. Zegarski, M.E. Gross, R.G. Nuzzo, Surf. Sci. 244 (1991) 89.
25. M.E. Day, M. Delfino, J. Electrochem. Soc. 143 (1996) 264.
26. J.A. Thornton, Ann. Rev. Mater. Sci. 7 (1977) 239.
27. J. Bass, Phil. Mag. 15 (1967) 717.
28. S.K. Dew, T. Smy, M.J. Brett, IEEE Trans. Electron Devices 39 (1992) 1599.
29. V. Hoffman, J. Griswold, D. Mintz, D. Harra, Thin Solid Films 153 (1987) 369.
30. M. Inoue, K. Hashizume, H. Tsuchikawa, J. Vac. Sci. Technol. A6 (1988) 1636.
31. S.M. Sze, VLSI Technology, McGraw-Hill, New York, 2nd edn., 1988, p. 411.
32. T. Kaizuka, H. Shinriki, N. Takeyasu, T. Ohta, Jpn, J. Appl. Phys. 33 (1994) 470.
33. M. Kageyama, Y. Tatara, H. Onoda, in Proceedings of the International Conference on Solid State Devices and Materials, Tsukuba, 1992, p. 181.