Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2218-2226

  Re, Valerio ^b,c   Manghisoni, Massimo ^b,c   Ratti, Lodovico ^a,c,d   Speziali, Valeria ^a,c,d   Traversi, Gianluca ^b,c  

^a IEEE   (Italy)

^b UNIVERSITY OF BERGAMO   (Italy)

^c INFN SEZIONE DI PAVIA   (Italy)

^d UNIVERSITY OF PAVIA   (Italy)

Author keywords

Deep submicron; Ionizing radiation; MOSFET; Noise; Shallow trench isolation (STI)

Indexed keywords

DEEP SUBMICRON; SHALLOW TRENCH ISOLATION (STI);

CMOS INTEGRATED CIRCUITS; IONIZING RADIATION; MOSFET DEVICES; NOISE ABATEMENT; RADIATION EFFECTS; TRANSISTORS;

OXIDES;

EID: 37249080731     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.908375     Document Type: Conference Paper

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