Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2, 2000, Pages 349-360

  Snoeys, W ^a   Faccio, F ^a   Burns, M ^a   Campbell, M ^a   Cantatore, E ^a   Carrer, N ^b   Casagrande, L ^c   Cavagnoli, A ^d   Dachs, C ^e,i   Di Liberto, S ^d   Formenti, F ^a   Giraldo, A ^a,b   Heijne, E H M ^a   Jarron, P ^a   Letheren, M ^a   Marchioro, A ^a   Martinengo, P ^a   Meddi, F ^d   Mikulec, B ^a   Morando, M ^b   Morel, M ^a   Noah, E ^a   Paccagnella, A ^b   Ropotar, I ^a   Saladino, S ^a,f   Sansen, W ^g   Santopietro, F ^d   Scarlassara, F ^b   Segato, G F ^b   Signe, P M ^a,j   Soramel, F ^b   Vannucci, L ^h   Vleugels, K ^a,g,k   more..

^a CERN   (Switzerland)

^b UNIVERSITY OF PADOVA   (Italy)

^c LIP   (Portugal)

^d SAPIENZA UNIVERSITY OF ROME   (Italy)

^e UNIV MONTPELLIER   (France)

^f INFN SEZIONE DI BARI   (Italy)

^g UNIVERSITY OF LEUVEN   (Belgium)

^h LABORATORI NAZIONALI DI LEGNARO   (Italy)

ⁱ PHILIPS RESEARCH LABORATORIES   (Netherlands)

^j MOTOROLA INC   (United States)

^k STANFORD UNIVERSITY   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GAMMA RAYS; IONIZATION; MOSFET DEVICES; PROTON IRRADIATION; READOUT SYSTEMS; X RAYS;

PIXEL DETECTORS; RADIATION TOLERANCE;

PARTICLE DETECTORS;

EID: 17944387744     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00899-2     Document Type: Article

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