Quality and reliability of wet and dry oxides on n-type 4H-SiC

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 460-463

  Anthony, Carl J ^a   Jones, Allan J ^a   Uren, Michael J ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

4H SiC; Charge to breakdown; Silicon carbide; Silicon dioxide; TDDB

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); SILICA; SILICON CARBIDE;

CHARGE TO BREAKDOWN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0006317814     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00555-8     Document Type: Article

References (9)

1. Brown D.M., Ghezzo M., Kretchmer J., Downey E., Pimbley J., Palmour J.W. IEEE Trans. Electron Dev. 41(4):1994;618.
2. L.A. Lipkin, J.W. Palmour and J.S. Suehle, Trans. Third Int. High Temp. Electron. Conf. (HiTEC) 2 (1996) XIV-15-XIV20.
3. Friedrichs P., Burte E.P., Schorner R. Appl. Phys. Lett. 65:1994;1665-1667.
4. A.J. Pidduck, R. Jackson, D.J. Robbins, W.Y. Leong, M. Wheeler, Proc. 2nd Int. Symp. Cleaning Technology in Semiconductor Device Manufacturing, ECS, 92-12, (1992) 453-460.
5. R.J. Bozeat, R.J.T. Bunyan, V. Nayar, In: D. Denton, P.J. Hesketh, H. Hughes (Eds.), Proc. 2nd Int. Symp. Microstructures and Microfabricated Systems, ECS, 95-27 (1995) 272-279.
6. Nicollian E.H., Brews J.R. MOS (Metal Oxide Semiconductor) Physics and Technology. 1994;Wiley, New York.
7. Kirton M.J., Uren M.J. Adv. Phys. 38:1989;367.
8. Ouisse T. Phys. Stat. Sol. (a) Appl. Res. 162:1997;339-368.
9. Agarwal A.K., Seshadri S., Rowland L.B. IEEE Elec. Dev. Lett. 18(12):1997;592-594.