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Applied Physics Letters

Volumn 88, Issue 22, 2006, Pages

Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography

(4) Black, D R a Woicik, J C a Erdtmann, M b Langdo, T A b

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b AmberWave Systems Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC DIFFRACTION GEOMETRY; X RAY TOPOGRAPHY;

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DIFFRACTION GRATINGS; DISLOCATIONS (CRYSTALS); IMAGE ANALYSIS; SUBSTRATES; THIN FILMS; WSI CIRCUITS; X RAY ANALYSIS;

SILICON;

EID: 33744815201 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2209411 Document Type: Article

Times cited : (3)

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