Wide optical bandgap p-type μc-Si:Ox:H prepared by Cat-CVD and comparisons to p-type μc-Si:H

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 593-596

  Matsumoto, Yasuhiro ^a   Sánchez R , Victor ^a   Avila G , Alejandro ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Boron doped microcrystalline silicon oxide; Solar cell window; Thermo catalytic CVD; Wide bandgap

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; IMPURITIES; MICROCRYSTALLINE SILICON; OPTICAL PROPERTIES;

BORON-DOPED MICROCRYSTALLINE SILICON OXIDES; SOLAR CELL WINDOW; THERMO-CATALYTIC-CVD; TUNGSTEN CATALYST TEMPERATURE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 36749096230     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.044     Document Type: Article

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