Tensile-strained germanium CMOS integration on silicon

IEEE Electron Device Letters

Volumn 28, Issue 12, 2007, Pages 1117-1119

  Zang, H ^a,b   Loh, W Y ^b   Ye, J D ^b   Lo, G Q ^b   Cho, Byung Jin ^b,c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

CMOS; CMOS integrated circuits; Germanium (Ge); HfO2; High ; MOSFET; Tensile strength

Indexed keywords

BUFFER LAYERS; GATE DIELECTRICS; HOLE MOBILITY; MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TENSILE STRENGTH;

GATE LEAKAGE CURRENT; ULTRAHIGH VACUUM CHEMICAL-VAPOR DEPOSITION;

CMOS INTEGRATED CIRCUITS;

EID: 36549001647     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.909836     Document Type: Article

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