Germanium p MOSFET with HfON gate dielectric

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 256-257

  Qingchun, Zhang ^a,b,c,d,e   Nan, Wu ^a,b,c,d,e   Chunxiang, Zhu ^a,b,c,d,e   Haitao, Liu ^a,b,c,d,e   Li, M F ^a,b,c,d,e   Chan, D S H ^a,b,c,d,e   Chin, Alben ^a,b,c,d,e   Kwong, D L ^a,b,c,d,e   Bera, L K ^a,b,c,d,e   Balasubmmanian, N ^a,b,c,d,e   Du, A Y ^a,b,c,d,e   Tung, C H ^a,b,c,d,e   Sin, Johnny K O ^a,b,c,d,e  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

^e HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; GERMANIUM; GERMANIUM OXIDES; HAFNIUM OXIDES; LEAKAGE CURRENTS; LOGIC GATES; MOS CAPACITORS; NITRIDATION; SEMICONDUCTOR DEVICES;

ADVANCED CMOS DEVICE; CRYSTALLIZATION TEMPERATURE; ELECTRICAL PERFORMANCE; HF-BASED DIELECTRICS; HIGH- K GATE DIELECTRICS; LOW-LEAKAGE CURRENT; NITROGEN INCORPORATION; SURFACE NITRIDATION;

MOSFET DEVICES;

EID: 84945305671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272086     Document Type: Conference Paper

References (3)

1. C.O. Chui, et al, in IEDM Tech. Dig., 2002, pp. 437.
2. W. P. Bai, et al, in Proc. VLSI Technol. Symp., 2003, pp. 121.
3. K. Onisbi et al, in Proc. VLSI Technol. Symp., 2002, pp. 122.