GaN IMPATT diode: A photo-sensitive high power terahertz source

Semiconductor Science and Technology

Volumn 22, Issue 12, 2007, Pages 1258-1267

  Mukherjee, Moumita ^a   Mazumder, Nilraton ^a   Roy, Sitesh Kumar ^b   Goswami, Kushalendu ^c  

^a VISVA BHARATI UNIVERSITY   (India)

^b UNIVERSITY OF CALCUTTA   (India)

^c JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; PHASE SHIFT; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTOR DIODES;

NEGATIVE CONDUCTANCE; PHOTO ILLUMINATIONS; SINGLE DRIFT REGION; SINGLE LOW HIGH LOW (SLHL);

GALLIUM NITRIDE;

EID: 36448931638     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/12/003     Document Type: Article

References (28)

1. Trew R J 2005 IEEE Trans. Electron Devices 52 638
2. Okumura H 2006 Japan. J. Appl. Phys. 45 7565
3. Inoki C K, Kaun T S, Lee C D, Sagar A, Feenstra R M, Koleske D D, Dfaz D Z, Bohn P W and Adesida I 2003 J. Electron. Mater. 32 855
4. Panda A K, Pavlidis D and Alekseev E 2001 IEEE Trans. Electron Devices 48 820
5. Reklaitis A and Reggiani L 2004 J. Appl. Phys. 95 7925
6. Mazumder N and Roy S K 1997 Semicond. Sci. Technol. 12 623
7. Vyas H P, Guttmann R J and Borrego J M 1979 IEEE Trans. Electron Devices 26 232
8. Seeds A J and Salles A A 1990 IEEE Trans. Microw. Theory Tech. 38 577
9. Mazumder N, Banerjee J P and Roy S K 1989 Phys. Status Solidi A 116 415
10. Mazumder N and Roy S K 1991 Int. J. Electron. 71 227
11. Mazumder N and Roy S K 1993 Phys. Status Solidi A 137 267
12. Stupelmann V and Filaretov G 1976 Semiconductor Devices (Moscow: Izd. Mir)
13. Roy S K, Sridharan M, Ghosh R and Pal B B 1979 Proc. 1st Conf. on Numerical Analysis of Semiconductor Devices (NASECODE I) ed J H Miller (Dublin: Boole) p 266
14. Albrecht J D, Wang R P, Ruden R P, Farahmand M and Brennan K F 1998 J. Appl. Phys. 83 4777
15. Electronic archive. New semiconductor materials, characteristics and properties http://www.ioffe.ru/SVA/NSM/Semicond/GaN
16. Kunihiro K, Kasahara K, Takahashi Y and Ohno Y 1999 IEEE Electron Device Lett. 20 608
17. Scharfetter D L and Gummel H K 1969 IEEE Trans. Electron Devices 16 64
18. Gummel H K and Blue J L 1967 IEEE Trans. Electron Devices 14 569
19. Roy S K, Banerjee J P and Pati S P 1985 Proc. 4th Conf. on Numerical Analysis of Semiconductor Devices (NASECODE IV) ed J H Miller (Dublin: Boole) p 494
20. Alderstein M G, Holway L H and Chu S L 1983 IEEE Trans. Electron Devices ED-30 179
21. Eisele H and Haddad G I 1997 Active Microwave Devices, in Microwave Semiconductor Device Physics ed S M Sze (New York) p 343
22. Mukherjee M and Mazumder N 2007 ICMMT 2007: Proc. 5th Int. Conf. on Microwave and Millimeter Wave Technology (Guilin: China) p 655
23. Mukherjee M and Mazumder N 2007 Proc. of MRS Spring Meeting 2007-Material and Material Structures Enabling Terahertz Technology (San Francisco, USA) pp CC 7.7
24. Burm J, Chu K, Davis W A, Schaff W J, Eastman L F and Eustis T J 1997 Appl. Phys. Lett. 70 464
25. Chu C F, Yu C C, Wang Y K, Tsai J Y, Lai F I and Wang S C 2000 Appl. Phys. Lett. 77 3423
26. Gibbons G 1973 Avalanche-Diode Microwave Oscillators (Oxford: Clarendon)
27. Holway L H and Adlerstein M G 1977 IEEE Trans. Electron Devices 24 156
28. Liu W, Balandin A A, Lee C and Lee H Y 2005 Phys. Status Solidi a 202 R135