Modeling of deep Si etching in two-frequency capacitively coupled plasma in SF6/O2

Journal of Physics: Conference Series

Volumn 86, Issue 1, 2007, Pages

  Hamaoka, Fukutaro ^a   Yagisawa, Takashi ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36348967632     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/86/1/012018     Document Type: Article

References (18)

1. Laermer F and Schilp A 1994 U.S. Patent 5501893, Germany Patent DE4241045
2. Tachi S, Tsujimoto K, Arai S and Kure T 1991 J. Vac. Sci. Technol. A 9 796
3. de Boer M J, Gardeniers J G E H, Jansen H V, Smulders E, Gilde M, Roelofs G, Sasserath J N and Elwenspoek 2002 J. Microelectromech. Syst. 11 385
4. Dussart R, Boufnichel M, Marcos G, Lefaucheux P, Basillais A, Benoit R, Tillocher T, Mellhaoui X 2004 J. Micromech. Microeng. 14 190
5. Aachboun S and Ranson P 1999 J. Vac. Sci. Technol. A 17 2270
6. Kim D and Economou D J 2002 IEEE. Trans. Plasma Sci. 30 2048
7. Hamaoka F, Yagisawa T and Makabe T 2007 Japan. J. Appl. Phys. 46 3059
8. 2 for MEMS Fabrication accepted for publication, Oct. 2007
9. Makabe T and Petrović Z Lj 2006 Plasma Electronics: Applications in Microelectronic Device Fabrication (New York: Taylor & Francis)
10. Nakano N, Shimura N, Petroví Z Lj and Makabe T 1994 Phys. Rev. E 49 4455
11. Nakano N, Petrovi$$ Z Lj and Makabe T 1994 Japan. J. Appl. Phys. 33 2223
12. Shibata M, Makabe T and Nakano N 1995 Japan. J. Appl. Phys. 34 6230
13. Shibata M, Nakano N and Makabe T 1996 J. Appl. Phys. 80 6142
14. Maeda K and Makabe T 1994 Japan. J. Appl. Phys. 33 4173
15. Yagisawa T and Makabe T 2003 IEEE Trans. Plasma Sci. 31 521
16. Thompson B E, Sawin H H and Fisher D A 1988 J. Appl. Phys. 63 2241
17. Shimada T, Yagisawa T and Makabe T 2006 Japan. J. Appl. Phys. 45 8876
18. Shimada T, Yagisawa T and Makabe T 2006 Japan. J. Appl. Phys. 45 L132