Electrical characterization of metal-insulator-metal capacitors with atomic-layer-deposited HfO2 dielectrics for radio frequency integrated circuit application

Chinese Physics Letters

Volumn 24, Issue 10, 2007, Pages 2942-2944

  Huang, Yu Jian ^a   Huang, Yue ^a   Ding, Shi Jin ^a   Zhang, Wei ^a   Liu, Ran ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC FIELDS; HAFNIUM OXIDES; INTEGRATED CIRCUITS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; TIMING CIRCUITS;

ATOMIC LAYER DEPOSITED; CONDUCTION MECHANISM; ELECTRICAL CHARACTERIZATION; HFO 2; HIGH-CAPACITANCE DENSITY; INTEGRATED CIRCUIT APPLICATIONS; METAL CAPACITORS; METAL INSULATOR METALS; RADIO FREQUENCY INTEGRATED CIRCUITS; RF INTEGRATED CIRCUITS;

ATOMIC LAYER DEPOSITION;

EID: 36348960829     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/10/063     Document Type: Article

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