Formation and characterization of 1.5-monolayer self-assembled InAs/GaAs quantum dots using postgrowth annealing

IEEE Transactions on Nanotechnology

Volumn 6, Issue 6, 2007, Pages 589-593

  Huang, Chun Yuan ^b   Ou, Tzu Min ^b   Chou, Shu Ting ^b   Wu, Meng Chyi ^a,b   Lin, Shih Yen ^c   Chi, Jim Yong ^c  

^a IEEE   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Epitaxial growth; Self assembled quantum dots; Semiconductor materials

Indexed keywords

CARRIER RELAXATION; POSTGROWTH ANNEALING; SELF-ASSEMBLED QUANTUM DOTS; STRANSKI-KRASTANOV GROWTH; SURFACE DISLOCATIONS;

ANNEALING; EPITAXIAL GROWTH; LUMINESCENCE; MONOLAYERS; SELF ASSEMBLY; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 36348940537     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.907847     Document Type: Article

References (22)

1. R. L. Sellin, C. Ribbat, D. Bimberg, F. Rinner, H. Konstanzer, M. T. Kelemen, and M. Mikulla, "High-reliability MOCVD-grown quantum dot User," Electron. Lett., vol. 38, no. 16, pp. 883-884, 2002.
2. P. Bhattacharya, S. Ghosh, S. Pradhan, J. Singh, Z. Wu, J. Urayama, K. Kim, and T. B. Norris, "Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 952-962, 2003.
3. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, "Low-threshold oxide-confined 1.3-μm quantum-dot laser," IEEE Photon. Technol. Lett., vol. 13, no. 3, pp. 230-232, 2000.
4. E. Towe and D. Pan, "Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors," IEEE J. Select. Topics Quantum Electron., vol. 6, no. 3, pp. 408-421, 2000.
5. 0.5P dark current blocking layer," Electron. Lett., vol. 38, no. 22, pp. 1374-1375, 2002.
6. 0.7As blocking barriers," IEEE Trans. Electron Device, vol. 49, no. 8, pp. 1341-1347, 2002.
7. M. H. Baier, E. Pelucchi, E. Kapon, S. Varoutsis, M. Gallart, I. Robert-Philip, and I. Abram, "Single photon emission from site-controlled pyramidal quantum dots," Appl. Phys. Lett., vol. 84, no. 5, pp. 648-650, 2004.
8. A. Kuhn, M. Hennrich, and G. Rempe, "Deterministic single-photon source for distributed quantum networking," Phys. Rev. Lett., vol. 89, no. 6, pp. 067901_1-4, 2002.
9. C. Santori, D. Fattal, J. Vučković, G. S. Solomon, and Y. Yamamoto, "Indistinguishable photons from a single-photon device", Nature, vol. 419, pp. 594-597, 2002.
10. M. Pelton, C. Santori, J. Vučković, B. Zhang, G. S. Solomon, J. Plant, and Y. Yamamoto, "Efficient source of single photons: a single quantum dot in a micropost microcavity," Phys. Rev. Lett., vol. 89, no. 23, pp. 233602_1-4, 2002.
11. E. Moreau, I. Robert, J. M. Gérard, I. Abram, L. Manin, and V. Thierry-Mieg, "Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities," Appl. Phys. Lett., vol. 79, no. 18, pp. 2865-2867, 2001.
12. J. R. Ro, S. B. Kim, and K. Park, "Size distribution of quantum-scale GaAs islands grown by Ga droplet induced chemical beam epitaxy," J. Vac. Sci. Technol. B, vol. 18, no. 3, pp. 1507-1509, 2000.
13. H. H. Zhan, R. Notzel, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter, "Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing," J. Appl. Phys., vol. 93, no. 10, pp. 5953-5958, 2003.
14. G. S. Solomon, J. A. Trezza, and J. S. Harris, "Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs,"Appl. Phys. Lett., vol. 66, no. 8, pp. 991-993, 1995.
15. R. Leon, Y. Kim, and C. Jagadish, "Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots," Appl. Phys. Lett., vol. 69, no. 13, pp. 1888-1890, 1996.
16. J. Tatebayashi, Y. Arakawa, N. Hatori, and H. Ebe, "InAs/GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition-Effects of postgrowth annealing on stacked InAs quantum date," Appl. Phys. Lett., vol. 85, no. 6, pp. 1024-1026, 2004.
17. J. Tatebayashi, M. Nishioka, T. Someya, and Y. Arakawa, "Area-controlled growth of InAs quantum dots and improvement of density and size distribution," Appl. Phys. Lett., vol. 77, no. 21, pp. 3382-3384, 2000.
18. W. Seifert, N. Carlsson, J. Johansson, M. Pistol, and L. Samuelson, "In situ growth of nano-structures by metal-organic vapour phase epitaxy," J. Cryst Growth, vol. 170, pp. 39-46, 1997.
19. S.J. Xu, X. C. Wang, and S. J. Chua, "Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots," Appl. Phys. Lett., vol. 72, no. 25, pp. 3335-3337, 1998.
20. Y. P. Varshni, "Temperature dependence of the energy gap in semiconductors," Physica, vol. 34, no. 1, pp. 149-154, 1967.
21. U. H. Lee, D. Lee, H. G. Lee, S. K. Noh, J. Y. Leem, and H. J. Lee, "Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers," Appl. Phys. Lett., vol. 74, no. 11, pp. 1597-1599, 1999.
22. 1-yAs self-organized quantum dots,"Phys. Rev. B, vol. 59, no. 7, pp. 5064-5068, 1999.